Table 1 Average concentration of impurities (in cm−3) from SIMS measurements in the region of 100–500 nm from the sample surface.

From: Evaluation of the concentration of point defects in GaN

Impurity\Sample

H3

H202

Detection limit

C

4.6 × 1016

1.1 × 1016

2 × 1015

O

2.6 × 1016

3.2 × 1016

6 × 1015

Si

6.7 × 1016

8.9 × 1016

1 × 1016

H

6 × 1017

4 × 1017

(3–5) × 1017

Cl

3.9 × 1016

3.7 × 1016

1 × 1015

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