Table 2 Concentration of defects (in cm−3) from the SIMS, PAS, DLTS, and PL measurements.
From: Evaluation of the concentration of point defects in GaN
Method | Defect | Sample H3 | Sample H202 |
|---|---|---|---|
SIMS | C | 4.6 × 1016 | 1.1 × 1016 |
H | <6 × 1017 | <4 × 1017 | |
Cl | 3.9 × 1016 | 3.7 × 1016 | |
N D (D = SiGa and ON) | 9.3 × 1016 | 1.2 × 1017 | |
PAS | VGa-related defects | 6 × 1017 | 1 × 1017 |
H1 (0.9 eV) | 6.3 × 1012 | 5 × 1014 | |
H3 (0.6 eV) |  | 3 × 1014 | |
H4 (0.7–0.85 eV) | 8.5 × 1012 |  | |
H5 (1.1–1.2 eV) |  | 5 × 1014 | |
Total of hole traps | 5 × 1013 | 1.5 × 1015 | |
N D  − N A | (2–8) × 1014 | 1 × 1017 | |
PL | RL1 (~1.2 eV) | 2.4 × 1014 | 2 × 1015 |
YL1 (0.916 eV) | 2.4 × 1014 | 8 × 1014 | |
BL1 (0.40 eV) | 1 × 1012 | 1 × 1013 | |
UVL (0.223 eV) | 7 × 1012 | 1 × 1014 | |
PL | Free electrons (n) at 300 K | 3.6 × 1016 | 5.3 × 1016 |
Hall effect | Free electrons (n) at 300 K | 7.5 × 1016 | 7 × 1016 |
