Table 1 Formation energy at the InSb Fermi level for In or Sb substituted in the oxygen vacancy of HfO2 or that of Al2O3.

From: Electrical properties and thermal stability in stack structure of HfO2/Al2O3/InSb by atomic layer deposition

Formation energy in HfO2

 

++

+

0

−

− −

In

−1.100

−1.095

0

0.892

2.196

Sb

0.042

0.539

0

−0.117

1.138

VO

−0.558

−0.948

0

0.466

1.777

Formation energy in Al 2 O 3

 

++

+

0

−

− −

In

−1.675

−1.206

0

1.104

2.878

Sb

0.839

−0.194

0

0.002

2.873

VO

1.209

0.807

0

3.051

5.293

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