Figure 2 | Scientific Reports

Figure 2

From: Habituation/Fatigue behavior of a synapse memristor based on IGZO–HfO2 thin film

Figure 2

(a) Synaptic currents of the memristor triggered by a pair of pluses. The pulse intensity, width, and interval are 1 V, 50 ms, and 1 s, respectively. (b) The post synaptic current of the memristor in response to the pulse train. As consecutive voltages are applied, on one hand the device conductivity continuously increases, on the other hand, the magnitude of this increase is gradually weakened. (c) The current as a function of the pulse numbers. (d) Current decays recorded after different numbers of pulse stimuli. In the fatigue region, the current decay rate is almost the same. the current decay curve was significantly different for different pulse counts for the device unreached fatigue due to insufficient pulse training.

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