Figure 4
From: Habituation/Fatigue behavior of a synapse memristor based on IGZO–HfO2 thin film
Diagram for the dynamic process for the devices. IGZO layer (a) in original state (b) during pulse, (c) during off period of pulse and (d) during further pulse. And HfO2 layer (e) in original state (f) during pulse, (g) during off period of pulse and (h) during further pulse.
