Figure 2 | Scientific Reports

Figure 2

From: Rapid Fabrication of Graphene Field-Effect Transistors with Liquid-metal Interconnects and Electrolytic Gate Dielectric Made of Honey

Figure 2

(a) Schematic representation of a LM-GFET device with a single-gate and location of the electric double layer. (b) Drain-to-source current as a function of drain-to-source voltage for varied top-gate voltage (I ds  − V ds ). (c) Left: Relationship of drain-to-source current as a function of top-gate voltage \(({I}_{ds}-{V}_{TG}^{\ast })\) and Right : Transconductance, G m , as a function of top-gate voltage \(({G}_{m}-{V}_{TG}^{\ast })\). (d) Model fit overlaid on drain-to-source resistance as a function of top-gate voltage \(({R}_{ds}-{V}_{TG}^{\ast })\).

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