Figure 1

(a) TEM image of W/GeOx/W memory device having via-hole size of 0.2 × 0.2 µm2. (b) HRTEM image exhibits 10 nm-thick polycrystalline GeOx film and corresponding FFT images (inset) exhibit the d-spacing value. XPS characteristics of (c) Ge2p and (d) O1s spectra for the GeOx films on p-Si substrate.