Figure 4
From: Structural properties of thin-film ferromagnetic topological insulators
Effect of vanadium doping on the unit cell. Reciprocal space maps of the (1 0 20) and Te (2 1 1) (right and left peaks in panels, respectively) in films on SrTiO3, with (a) x = 0.06 and (b) x = 0.11, where (Bi, Sb)2−x V x Te3. Dashed lines indicate fitted position of (1 0 20). (c) 2θ/ω scans (offset for clarity) of the same films.
