Figure 5
From: Structural properties of thin-film ferromagnetic topological insulators
Unit cell parameters as a function of thickness and substrate choice. Reciprocal space maps showing the (Bi, Sb)2−x V x Te3 (1 0 20) and Te (2 1 1) peaks, from films grown on SrTiO3 (1 1 1) ((a–c) 4, 10 and 20 QL, respectively), Al2O3 (0 0 0 1) ((d) 10 QL), and Si (1 1 1) ((e) 10 QL). Film peaks measured with respect to SrTiO3 (1 1 2), Al3O3 (0 1–1 8) or Si (3 3 1). Grey dashed lines indicate fitted position of (1 0 20). Panel (a) shows the same dataset as Fig. 4a.
