Table 1 Unit cell parameters of Cr- and V-doped (Bi, Sb)2Te3 calculated from HRXRD measurements of samples with various substrates, thicknesses and doping levels.
From: Structural properties of thin-film ferromagnetic topological insulators
Substrate | Thickness | Doping | c (Å, 2θ/ω) | c (Å, RSM) | a (Å, RSM) | V (Å3) | Lattice mismatch | FWHM (°) |
|---|---|---|---|---|---|---|---|---|
Bulk | 30.60 | 4.30 | 490.0 | |||||
STO (1 1 1) | 4 QL | V0.06 | 30.51 ± 0.05 | 30.55 ± 0.42 | 4.28 ± 0.14 | 484.0 | −3.4% \((\frac{2{a}^{TI}}{3}\,\cos \,30^\circ )\) | |
V0.11 | 30.62 ± 0.06 | 30.50 ± 0.42 | 4.26 ± 0.15 | 481.2 | 0.11 | |||
5 QLa | Cr0.15* | 30.62 ± 0.06 | 4.28 | 485.8 | ||||
Cr 0.15 | 30.66 ± 0.19 | 4.28 | 486.4 | |||||
10 QL | V0.07 | 30.54 ± 0.03 | 30.54 ± 0.43 | 4.28 ± 0.16 | 484.5 | 0.15 | ||
20 QL | V0.07 | 30.44 ± 0.01 | 30.34 ± 0.41 | 4.30 ± 0.16 | 487.4 | 0.16 | ||
Al2O3 (0 0 0 1) | 10 QL | V0.07 | 30.47 ± 0.08 | 30.49 ± 0.32 | 4.29 ± 0.13 | 485.6 | +2.6% \((\frac{2{a}^{TI}}{3})\) | 0.12 |
20 QLb | V0.15 | 30.39 | ||||||
Cr0.16 | 30.15 | |||||||
None | 30.34 | |||||||
Si (1 1 1) | 10 QL | V0.07 | 30.45 ± 0.07 | 30.22 ± 0.41 | 4.30 ± 0.20 | 487.6 | −2.8% \((\frac{3{a}^{TI}}{4})\) | 0.36 |
InP (1 1 1) | 8 QLc | Cr0.22 | 30.26 | −3.6% (a TI cos 30°) |
