Figure 2
From: Memory characteristics of silicon nanowire transistors generated by weak impact ionization
(a) Energy band diagrams of the positive feedback mechanism. (b) Output characteristics of the n+-p-n+ SiNW FET.
Figure 2 | Scientific Reports
From: Memory characteristics of silicon nanowire transistors generated by weak impact ionization
(a) Energy band diagrams of the positive feedback mechanism. (b) Output characteristics of the n+-p-n+ SiNW FET.
