Table 1 Operating conditions of the n+-p-n+ Si NW FET for the evaluation of the SRAM characteristics.
From: Memory characteristics of silicon nanowire transistors generated by weak impact ionization
Program (write “1”) | Erase (write “0”) | Read | |
---|---|---|---|
V GS (V) | 0 | –4.6 | –2.3 |
V DS (V) | 4.35 | 4.35 | 4.35 |