Table 1 Operating conditions of the n+-p-n+ Si NW FET for the evaluation of the SRAM characteristics.

From: Memory characteristics of silicon nanowire transistors generated by weak impact ionization

 

Program (write “1”)

Erase (write “0”)

Read

V GS (V)

0

–4.6

–2.3

V DS (V)

4.35

4.35

4.35