Table 2 Comparison of the memory characteristics of SRAM array cell.
From: Memory characteristics of silicon nanowire transistors generated by weak impact ionization
Device type | Operation time | Area size | Standby power | V DD | |
|---|---|---|---|---|---|
Conventional | Standard 6T–SRAM | ~1 ns | 140 F2 | ~1 nW | <1 V |
This work | SiNW FET SRAM array cell | 5 ns | 8 F2 | ~10 pW | 4.35 V |
