Figure 3
From: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer
Optical characteristics of the B-Si junction. (a) Measured spectral responsivity in the near-ultraviolet and vacuum-ultraviolet spectra. The responsivity of the same B-Si photodiode was measured over two years to confirm the stability of the B-Si junction over time. (b) Measured spectral responsivity of three samples from one wafer in the extreme ultraviolet spectrum. (c) Measured responsivity of Sample 3 before and after exposure to 1 kJ/mm2. (d) Typical spatial uniformity of responsivity, measured along the horizontal axis of the samples at 13.5 nm wavelength irradiation.
