Figure 5
From: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer
Photodiodes used in Fig. 3a. (a) Processing steps of the fabricated photodiodes with boron-only beam entrance windows, for boron deposition after the metallization. (b) Photograph of the photodiode with a 9.6 mm × 9.6 mm active area.
