Figure 7
From: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer
Typical C-V characteristics of a high-temperature (HT) p-n junction and a low-temperature (LT) B-Si junction. The two junctions have the same layout, but are processed in separate wafer batches. The two C-V characteristics have similar shapes. The difference in the junction capacitance values, which defines the different depletion widths, is most likely due to variations in the doping levels of the n-type silicon of the two wafer batches.
