Figure 8
From: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer
Measured I-V characteristics of the B-Si diode samples. The I-V measurements of pre-metal HT- and post-metal LT-PureB photodiodes with an active area of (9.6 × 9.6) mm2. The boron layer thickness was measured by ellipsometry and found to be 3.2 nm and 4.5 nm for the HT and LT photodiodes, respectively.
