Figure 1

Selected depth profiles of relative disorder in Ge bombarded at 110 °C with a pulsed beam of 500 keV Ar ions with F _on , t _on , and t _off given in the legends at total fluences of (a) 4.9 × 10¹³ cm⁻² and (b) 7.5 × 10¹³ cm⁻². For clarity, only every 10th experimental point is depicted. Panel (a) is a pulsed beam measurement of τ, whereas (b) is a measurement of L _d . The inset in (a) is a schematic of the time dependence of the instantaneous dose rate for pulsed beam irradiation, defining t _on , t _off , and F _on .