Figure 1 | Scientific Reports

Figure 1

From: Degradation by water vapor of hydrogenated amorphous silicon oxynitride films grown at low temperature

Figure 1

(a–c) TEM images and (d–f) TEM-EDS elemental mapping images after PCT of 0, 15, and 40 h for a SiON:H film, respectively. As-deposited sample was deposited on Si substrate at 160 °C and a N2O flow of 14 sccm. The blue, green and red parts in (d,e) and (f) represent SiO2:H, SiON:H and Si substrate regions, respectively. The scales of all the images are the same as shown in Fig. 1(f).

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