Table 1 Mass density and atomic concentration of SiON:H films as a function of the N2O gas flow. The last column represents the thicknesses of fully oxidized SiO2:H after PCT of 30 h. The samples were deposited at 160 °C and 10 sccm for both SiH4 and NH3.

From: Degradation by water vapor of hydrogenated amorphous silicon oxynitride films grown at low temperature

N2O sccm

Density g/cm3

Si at%

O at%

N at%

H at%

Oxidation nm

0

2.25

27.9

0.0

45.2

26.8

5

2

2.22

27.0

9.8

37.3

25.9

7

4

2.18

29.1

16.5

32.2

22.2

8

6

2.17

28.7

20.5

28.8

22.0

10

8

2.15

29.7

26.9

24.5

18.9

18

10

2.13

29.1

32.3

20.8

17.9

30

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