Table 2 Mass density and atomic concentration of SiON:H films as a function of the deposition temperature. The last column represents the thicknesses of fully oxidized SiO2 after PCT of 30 h. The samples were deposited at 6 sccm for N2O and 10 sccm for both SiH4 and NH3.

From: Degradation by water vapor of hydrogenated amorphous silicon oxynitride films grown at low temperature

Temperature °C

Density g/cm3

Si at%

O at%

N at%

H at%

Oxidation nm

100

2.12

26.6

26.8

24.0

22.6

 

150

2.17

27.6

24.1

26.0

22.3

13.0

200

2.25

29.3

17.2

31.2

22.3

5.5

250

2.30

29.8

15.3

33.6

21.3

3.5

300

2.47

31.2

13.6

35.1

20.1

3.5

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