Figure 1
From: Spatially Resolved Thermometry of Resistive Memory Devices

Temperature dependent Raman spectra of RRAM oxide nanoscale thin films. Raman spectra of crystallized 50 nm thin films of (a) HfO2 and (b) TiO2, measured at temperatures ranging from 25 °C to 600 °C. Spectra are vertically offset for clarity. Insets show peak position shift with temperature of a selected mode, error bars represent 95% confidence bounds of Lorentzian peak fitting. The HfO2 was sputtered onto Pt (50 nm) on sapphire substrate and then annealed at 600 °C for 2 hours. All measured peaks above 110 cm−1 are assigned to monoclinic phase of HfO2 (as confirmed by XRD)24. The TiO2 was sputtered onto SiO2 (90 nm) on Si substrate and annealed at 400 °C for 1 hour. The peak at ~141 cm−1 (25 °C) is assigned to anatase TiO2 and the other peaks are from the Si substrate.