Figure 1 | Scientific Reports

Figure 1

From: Spatially Resolved Thermometry of Resistive Memory Devices

Figure 1

Temperature dependent Raman spectra of RRAM oxide nanoscale thin films. Raman spectra of crystallized 50 nm thin films of (a) HfO2 and (b) TiO2, measured at temperatures ranging from 25 °C to 600 °C. Spectra are vertically offset for clarity. Insets show peak position shift with temperature of a selected mode, error bars represent 95% confidence bounds of Lorentzian peak fitting. The HfO2 was sputtered onto Pt (50 nm) on sapphire substrate and then annealed at 600 °C for 2 hours. All measured peaks above 110 cm−1 are assigned to monoclinic phase of HfO2 (as confirmed by XRD)24. The TiO2 was sputtered onto SiO2 (90 nm) on Si substrate and annealed at 400 °C for 1 hour. The peak at ~141 cm−1 (25 °C) is assigned to anatase TiO2 and the other peaks are from the Si substrate.

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