Figure 2
From: Spatially Resolved Thermometry of Resistive Memory Devices
Temperature dependent Raman spectra of 20 nm thin GST film. (See Methods). (a) Raman spectra during the first heating cycle on a hot stage from 25 °C to 400 °C. As-deposited, the GST is amorphous, but after heating the film starts to crystallize first to the fcc phase and then to the hcp phase. (b) Temperature dependent Raman spectra of the stable hcp phase GST at temperatures ranging from 25 °C to 450 °C. Similar spectra were obtained for cooling (not shown). (c) Example of measured (symbols) and fitted (lines) peak for a selected mode at 25 °C and 400 °C in the hcp phase. (d) Peak position shift vs. temperature of the selected mode shown in (c). Error bars represent 95% confidence bounds of Lorentzian peak fitting.
