Figure 3
From: Spatially Resolved Thermometry of Resistive Memory Devices
Temperature dependent Raman spectra of lateral GST device. (a) Device and measurement setup. The GST channel (W = 10 µm, L = 5 µm) is patterned on top of Pt electrodes and capped with PMMA (see Methods). (b) Stokes and anti-Stokes Raman spectra of patterned GST device on a hot stage at temperatures from 25 °C to 125 °C. These are dominated by Te modes35 with much higher intensity than GST modes. (c) Peak shift with temperature of a selected mode (at ~120 cm−1). (d) Anti-Stokes to Stokes intensity ratio vs. temperature of the selected mode shown in (c).
