Figure 4
From: Spatially Resolved Thermometry of Resistive Memory Devices
Thermometry of a lateral PCM device. (a) Measurement setup: Raman (and SThM) acquired during device operation with self-heating. (b) Measured (symbols) and fitted (lines) Raman spectra of the GST at the center of the channel with electrical bias (red: V = 10 V, I = 0.5 mA) and without bias (blue). (c) Simulated cross-section temperature profile of the device near the contact, highlighting the temperature measured by Raman (directly on GST film with Gaussian laser spot size) and SThM (top surface of PMMA capping layer).
