Figure 5
From: Spatially Resolved Thermometry of Resistive Memory Devices
Measured vs. simulated temperature rise. Temperature rise along GST channel in fcc phase (black symbols) measured by (a) SThM and (b) Raman thermometry. The gray zones mark the contact regions. The simulated temperature rise fitted by finite element modeling for SThM (red dashed line) and Raman (blue dash-dot line) are also shown in (a) and (b) respectively. (c) Simulated temperature rise of the GST channel (green solid line), the SThM (top of PMMA surface averaged across thermal exchange radius42) same as in (a) and Raman (GST with Gaussian laser spot size) same as in (b). Black arrows mark hole current flow direction.
