Figure 1
From: The photoelastic coefficient \({P}_{12}\) of H+ implanted GaAs as a function of defect density
The damage-induced vacancy distribution as calculated by the TRIM code is shown in (a). Brillouin oscillations in the pump-probe reflectivity signal of the H+ implanted GaAs specimens for (b) s- and (c) p-polarized probe beam (in black). The probe wavelength is 880 nm. The implantation fluence is \(3\,\times \,{10}^{15}\) cm−2. Red curves represent the corresponding signal for an unimplanted specimen.
