Figure 2
From: The photoelastic coefficient \({P}_{12}\) of H+ implanted GaAs as a function of defect density
Depth dependent profiles of the relative changes in the photoelastic coefficients \({\rm{\Delta }}{P}_{12}/{P}_{12}\) (a) and \({\rm{\Delta }}{P}_{eff}/{P}_{eff}\) (b) of GaAs implanted at \(3\,\times \,{10}^{15}\) cm−2 with 140 keV H+. The error bars were estimated from statistical analysis of a set of experimental spectra.
