Figure 5
From: Graphene-Insulator-Semiconductor Junction for Hybrid Photodetection Modalities
Prediction of device performance with increasing graphene mobility and reduced surface generation velocities (i.e, lower dark current). (a) Simulated photoresponse (Id,Ligth(t)–Id,Dark(t)) under pulsed back-gate measurement (Vbg = +3 V) for increasing mobility using a fixed illumination of 30 nW. (b) Simulated responsivities as a function of mobility extracted from Id(Popt) data (not shown) for different integration times (normalized to the responsivity attainable with commercial graphene presently available). (c) Simulated SNR for several low-level illumination powers using a surface generation rate of 10 cm/s and a mobility of 10,000 cm2/Vs.
