Figure 3
From: Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes
Effect of Shockley-Hall-Read constant A on injection efficiency and excited Eu+3 ion concentration of GaN:Eu QW active region. (a) Injection efficiency and excited Eu+3 ion concentration as a function of photon flux for optical model and (b) Injection efficiency and excited Eu+3 ion concentration as a function of current density for electrical model. The ηIQE is defined as ηIQE = ηinj∙ηrad and follows the same trend as the ηinj of the optical and electrical model.
