Figure 7
From: Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes
Effect of radiative lifetime τrad of Eu+3 ion on injection efficiency and excited Eu+3 ion concentration of GaN:Eu QW active region. (a) Injection efficiency and excited Eu+3 ion concentration as a function of photon flux for optical model and (b) Injection efficiency and excited Eu+3 ion concentration as a function of current density for electrical model. The ηIQE follows the same trend as the ηinj for the optical and electrical model. The non-radiative lifetime of Eu+3 ion is set to τEu_heat = 1 ms. Different radiative lifetimes correspond to different radiative efficiencies. For τrad = 400 μs the radiative efficiency is ηrad = 71.43%. Similarly, for τrad = 200 μs / ηrad = 83.3%, for τrad = 70 μs / ηrad = 93.46%, and for τrad = 30 μs / ηrad = 97.09%.
