Table 2 (a) Simulations of external quantum efficiency (EQE) for a GaN:Eu QW device-high EQE. (b) Simulations of external quantum efficiency for a GaN:Eu QW device-low EQE.
From: Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes
Parameters | Simulation I | Simulation II | Simulation III | Simulation IV |
|---|---|---|---|---|
(a) | ||||
A (s−1) | 0.5·108 | 106 | 106 | 106 |
τcap0 (s) | 10−7 | 10−7 | 10−8 | 10−8 |
τtr0 (s) | 36·10−6 | 36·10−6 | 36·10−7 | 36·10−7 |
τdiss, τbt0 (s) | 10−3, 200·10−6 | 10−3, 200·10−6 | 10−3, 200·10−6 | 10−3, 200·10−6 |
τc_heat, τEu_heat (s) | 10−3, 10−3 | 10−3, 10−3 | 10−3, 10−3 | 10−3, 10−3 |
τrad (s) | 200·10−6 | 200·10−6 | 200·10−6 | 100·10−6 |
N (cm−3) | 8.5·1019 | 8.5·1019 | 8.5·1019 | 8.5·1019 |
Ntraps (cm−3) | 8.5·1019 | 8.5·1019 | 8.5·1019 | 8.5·1019 |
LQW, LEu, LB (nm) | 5, 5, 10 | 5, 5, 10 | 5, 5, 10 | 5, 5, 10 |
(b) | ||||
A (s−1) | 106 | 106 | 106 | 106 |
τcap0 (s) | 10−4 | 10−6 | 10−6 | 10−6 |
τtr0 (s) | 36·10−6 | 36·10−6 | 36·10−4 | 36·10−6 |
τdiss, τbt0 (s) | 10−3, 200·10−6 | 10−6, 200·10−6 | 10−3, 200·10−6 | 10−3, 200·10−8 |
τc_heat, τEu_heat (s) | 10−3, 10−3 | 10−3, 10−3 | 10−3, 10−3 | 10−3, 10−3 |
τrad (s) | 200·10−6 | 200·10−6 | 200·10−6 | 100·10−6 |
N (cm−3) | 8.5·1019 | 8.5·1019 | 8.5·1019 | 8.5·1019 |
Ntraps (cm−3) | 8.5·1019 | 8.5·1019 | 8.5·1019 | 8.5·1019 |
LQW, LEu, LB (nm) | 5, 5, 10 | 5, 5, 10 | 5, 5, 10 | 5, 5, 10 |
