Figure 3
From: Control of the interaction strength of photonic molecules by nanometer precise 3D fabrication

3D patterns written into a 110 nm thick PPA film to quantify the accuracy of the closed loop lithography process. Write pixel size was 11.4 nm, read pixel size was 5.7 nm. One write pixel was written every 15 μs. (a) t-SPL topography image of a sine wave pattern written between depths of 10 nm and 35 nm. (b) Written (red line) and target depth (black dashed line) along the red cross section of (a). (c) Written vs target depth for each depth level in the upper 75% of the pattern in (a). The error distribution for all pixels is shown in the inset. (d) t-SPL topography image of a 4 × 4 chequerboard pattern with a level spacing of ≈1.7 nm. (e) The target (black dashed line) and written depths (colored solid lines) along the cross sections in (d). (f) Written vs target depth for each depth level in (d). The error distribution is shown in the inset. (g) Topography image of a self-affine surface roughness pattern. (h) Average spectral amplitudes \(\langle |z|\rangle \) of (g) (blue line) compared to the target spectrum (red dashed line).