Figure 4
From: Control of the interaction strength of photonic molecules by nanometer precise 3D fabrication
Result of transferring 3D patterns from the PPA resist layer into a substrate using reactive ion etching. (a) AFM topography image of a silicon surface after the transfer of a sine wave pattern. The pixel size was 39 nm. (b) Cross section along the read line in (a) compared to the target profile (black dashed line) scaled by a factor of 6.1. (c) SEM image of a spiral phase plate geometry. (d) The topography measured by the AFM and target profile along the circular paths shown in (d). The pixel size was 31 nm. (e–f) Results for the transfer of a 30 nm deep and 450 nm wide (full width half maximum) Gaussian cavity transferred into a sputtered silicon oxide layer. The pixel size for the AFM image was 12 nm. (g–h) The Distribution of measured depths in silicon (g) and silicon oxide (h) as a function of the target depths in PPA for the examples shown.
