Figure 6

TMR in an MTJ with a [MnGa(4.5 nm)/Co₂MnSi(0.9 nm)]₄ reference electrode. (a) Resistance of the MTJ versus applied perpendicular magnetic field (R-H) measured at temperatures from 10 to 370 K. (b) Schematic depiction of the four different magnetic states for the MTJ in a down-sweep (positive to negative magnetic field: dash line and black arrows). The switchings between the magnetic states are marked by numbers 1 to 4. The magnetic moment rotation of the CoFe from state 2 to 3 is depicted separately. (c) TMR, coercivity H _c, and the exchange bias field H _EB at different temperatures. The TMR is defined as \(({R}_{{\rm{state}}3}-{R}_{{\rm{state}}1})/{R}_{{\rm{state}}1}\), H _c and H _EB are determined by \(({H}_{{\rm{C}}}^{+}-{H}_{{\rm{C}}}^{-})/2\) and \(({H}_{{\rm{C}}}^{+}+{H}_{{\rm{C}}}^{-})/2\), respectively.