Figure 2 | Scientific Reports

Figure 2

From: High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization

Figure 2

Raman spectroscopy study of the Ge layers. (a,b) Raman spectra of the sample annealed at (a) 450 °C for 5 h and (b) 375 °C for 140 h. The spectra for a bulk-Ge wafer are shown for comparison. (c) Crystallinity for samples with T d = 50 °C, 125 °C, and 200 °C as a function of annealing time, determined by the annealing-time evolution of Raman spectra representatively shown in the insertion. (d) FWHMs of the Ge-Ge peaks for samples with T g = 375 °C, 400 °C, and 450 °C as a function of T d. The data for a bulk-Ge wafer is shown by the dotted line.

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