Figure 7
(a) Height image and (b) current image of the bSi/PCBM film measured by c-AFM after thermal annealing at 160 °C. The bSi/PCBM film were prepared by spin-coating the mixed solution of bSi (0.88 g L−1) and PCBM (10 g L−1). A bias of −1.5 V was applied to the ITO substrate. Areas with high flatness assigned as the SSM-induced phase are enclosed by the green lines. (c) Log I vs. log V plot in the normal crystal domain (blue line) and the SSM-induced crystal domain (red line) measured by c-AFM. Current was averaged at 10 different points in the domains, as shown in Figure S14. Black lines were fitted curve with a slope of 2 by using the modified SCLC model for c-AFM.
