Figure 4
From: Observation of carrier localization in cubic crystalline Ge2Sb2Te5 by field effect measurement
(a) Band diagram of MIS structure under applied bias voltage. (b) The XPS spectra of the valence band for GST films with increasing T a between 150 °C and 190 °C. The Fermi level (E = 0 eV) of GST films are all located near the VBM. (c) Extracted excess charge field effect mobility against temperature showing the Arrhenius mobility-temperature relationship. (d) Field effect mobility versus annealing temperature. The field effect mobility increases with increasing annealing temperature, indicating the carrier delocalization.
