Figure 3

Implementation of MASH oscillator with strain feedback: (a) A three-terminal MTJ and 2-port HBAR are fabricated on the opposite sides of the same silicon substrate, and coupled to each other with strain due to the magnetostriction effect. (b) Modular modeling of transport, magnetization, and resonator dynamics. (c) Locking range versus amplifier gain for two different substrate thicknesses (100 μm and 200 μm) simulated with an FBAR where thicker substrate (t _Si  = 200 μm) requires larger gain since it can generate lower strain. (d) Tunability is achieved with V _tune by locking the STNO to the nearest HBAR peak. The thickness of the substrate determines the tuning-steps by defining the spacing between the HBAR modes.