Figure 4
Implementation of MASH oscillator with current feedback: (a) A three-terminal MTJ and a 2-port HBAR are fabricated on the same silicon substrate, and coupled to each other with the current feedback. (b) Modular modeling of transport, magnetization, and resonator dynamics. (c) Locking range versus amplifier gain for two different substrate thicknesses (100 μm and 200 μm) simulated with an FBAR. The thicker substrate (t Si = 200 μm) does not affect the gain needed for the locking. (d) Tunability can be achieved with 22 MHz or 43 MHz steps depending on the substrate thickness (t Si ) using the same amplifier gain by locking the nearest high Q peaks of the HBAR.
