Figure 5

Implementation of MASH oscillator with magnetic field feedback: (a) A three-terminal MTJ with a CPW and a 2-port HBAR are fabricated on the same silicon substrate, and coupled to each other with the magnetic field. (b) Modular modeling of transport, magnetization, and resonator dynamics. (c) Locking range versus the amplifier gain for two different substrate thicknesses (100 μm and 200 μm). The thicker substrate (t _Si  = 200 μm) does not affect the gain needed for locking. (d) Tunability can be achieved with 22 MHz or 43 MHz steps depending on the substrate thickness using the same amplifier gain by locking to the nearest high Q peaks of the HBAR.