Figure 2

(a) ADF-STEM and (b) iDPC-STEM images of a GaN crystal in [\(10\bar{1}1\)] orientation. (c) ADF-STEM and (d) iDPC-STEM image of a GaN crystal in [\(11\bar{2}0\)] orientation. ADF- and iDPC-STEM images were recorded simultaneously in both cases. Beam current is 10 pA in all cases; the dwell time is 20 μs in (a,b), and 10 μs in (c,d); beam opening angle 29.4 mrad FOV is 6.2 nm. All images are shown as they appear live on the screen without any post-processing.