Figure 6 | Scientific Reports

Figure 6

From: Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films

Figure 6

Schematics of the Resistive Switching Mechanism: Schematic showing the drift of boron ions (B−, solid balls) towards the Pt tip at high positive bias. At low bias, B− ions diffuse back to annihilate the boron vacancy (open circles), reducing the overall conductivity of the h-BN/Cu stack. The directional movement of B− ions is governed by the interplay between diffusion and drift. The length of arrows indicates qualitatively the relative magnitude of drift and diffusion flux of B− ions.

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