Figure 3
From: Ultra-Broadband Optical Gain in III-Nitride Digital Alloys
Ultra-broadband optical gain spectra of a 50-period InN/GaN digital alloy formed by (a) 2 MLs thick GaN barriers and 2 MLs thick InN quantum wells, and (b) 2 MLs thick GaN barriers and 4 MLs thick InN quantum wells. The carrier density (n) increases from 2.5 × 1019 cm−3 to 12.5 × 1019 cm−3 with increments of 2.5 × 1019 cm−3.
