Figure 8
From: Thermally Stable, High Performance Transfer Doping of Diamond using Transition Metal Oxides

Sheet resistance measurements up to 300 °C for V2O5 encapsulated Substrates, (J, K and L) with cool-down period.
From: Thermally Stable, High Performance Transfer Doping of Diamond using Transition Metal Oxides
Sheet resistance measurements up to 300 °C for V2O5 encapsulated Substrates, (J, K and L) with cool-down period.