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Figure 1

From: On the insulator-to-metal transition in titanium-implanted silicon

Figure 1

Raman scattering (a,b) and Rutherford backscattering spectrometry/channeling (cRBS) (c,d) spectra of Ti-implanted Si samples with fluences of 1.2 × 1016 cm−2 and 2 × 1015 cm−2 are shown in (a,c) after PLA at 0.8 J/cm2 and (b, d) FLA at 55.5 J/cm2. Both Raman and RBS spectra for virgin Si as well as the as-implanted samples with the fluence of 1.2 × 1016 cm−2 are shown for comparison.

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