Figure 3
From: On the insulator-to-metal transition in titanium-implanted silicon
(a) Temperature-dependent sheet resistance of Ti-implanted Si after PLA and FLA. The inset shows the sheet resistance, in a linear scale, of the PLA-treated sample with a fluence of 1.2 × 1016 cm−2. (b) Analysis of transport properties for PLA samples showing the sheet resistance values as a function of T−1/2. (c) Reduced activation energy W of the conductance versus temperature for the PLA samples.
