Figure 7
From: Material Synthesis and Device Aspects of Monolayer Tungsten Diselenide
Interface states in back-gated WSe2 transistors. (a) Two-point conductance as a function of gate voltage measured at various temperatures. (b) Subthreshold swing as a function of gate overdrive, V G − V T , at various temperatures. (c) Extracted interface trap density as a function of gate overdrive. (d) Temperature dependence of the threshold voltage. The inset illustrates the positive interface trapped charges located at the WSe2/oxide interface when the gate is biased at the threshold voltage.
