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Figure 1

From: Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires

Figure 1

Morphology, diameter comparison and structural characterization of all GaAs NWs prepared by 12 nm thick Au catalyst films in H2 atmosphere. SEM images of GaAs NWs prepared (a) without any chalcogen passivation, (b) with S passivation, (c) with Se passivation and (d) with Te passivation during the NW growth; (e) diameter distribution of NWs grown without and with the chalcogen passivator; (f) XRD patterns of the as-prepared GaAs NWs.

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