Figure 2 | Scientific Reports

Figure 2

From: Chalcogen passivation: an in-situ method to manipulate the morphology and electrical property of GaAs nanowires

Figure 2

Electron microscopy characterization of thin sulfur-assisted grown GaAs NWs. (a) High-resolution transmission electron microscope (HRTEM) image of a representative NW, illustrating the catalyst seed/body region. The diameter is ~23 nm with the growth direction of <111>; (b–d) EDS elemental mappings of Ga, As and S, respectively. The inset is the TEM image of an individual NW for collecting the EDS spectra.

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